632.8nm, 55mW Free Space Frequency Stabilized Laser Diode

Product Details Single Longitudinal Mode (SLM) Performance ±0.002nm Wavelength Stability Very Low Power Consumption 632.8nm Frequency Stabilized Laser Diodes are ideal for typical HeNe laser applications including flow cytometry, interferometry, confocal microscopy, fluorescence excitation, and Raman spectroscopy. Whereas a comparable HeNe laser would be larger, more expensive, and consume more power, the 632.8nm Frequency Stabilized Laser Diodes feature more compact designs, ±0.002nm wavelength stability, and either greater than 60mW power (free-space model) or greater than 20mW power (fiber coupled model). Additionally, these lasers utilize Variable Bragg Gratings (VBG) to lock the 632.8nm wavelength to a 10MHz linewidth. Specifications General Warm-Up Time (minutes): 2.00 Aspect Ratio: 1.5 – 2 (Output Beam) Type of Laser: Diode Laser Class – CDRH: IIIb Physical & Mechanical Properties Dimensions (mm): 71.0 L x 63.5 W x 19.8 H Weight (g): 135.00 Pointing Stability (μrad): <50 (8 Hours) Optical Properties Polarization: 100:1 Linear Wavelength (nm): 632.80 Mode Quality, M 2 : 1.1 (Horizontal) 1.2 (Vertical) Wavelength Tolerance (nm): ±0.5 Beam Diameter (mm): 0.8 x 1.6 Spectral Line Width (MHz): Typical: 10 Beam Stability (nm): ±0.002 Beam Divergence (mrad): 1.3 x 0.8 Color: Red Electrical Output Power (mW): 55 Power Stability (%): 1.00 Power Consumption (W): Max: 5 Output Power Tolerance (%): ±10 Noise Level: 10 Hz - 100 MHz: 0.2% RMS Input Current (A): Max: 2 @ 3.3 V Hardware & Interface Connectivity Electrical Leads/ Pin Connections: 10-pin Connectors (cable provided upon request) Computer Interface: USB Output Type: Free Space Environmental & Durability Factors Operating Temperature (°C): +15 to +40 Operating Humidity: 5 - 95% (non-condensing) Regulatory Compliance Certificate of Conformance: View ×