3mm Dia., Four-Element Segmented InGaAs Photodiode

Product Details Four Individual Active Area Elements High Response Uniformity and Low Crosstalk Ideal for Position Detection and Beam Alignment Segmented Silicon Photodiodes and InGaAs Photodiodes Also Available Segmented InGaAs Photodiodes feature large active areas divided into four individual elements. The four elements of these photodiodes have high response uniformity and low crosstalk, enabling their use in accurate nulling or centering applications. These photodiodes are stable over time and temperature, providing responsivity from 900 – 1700nm with excellent responsivity between 1100 – 1620nm. Segmented InGaAs Photodiodes are ideal for position detection, beam alignment, and beam profiling applications in the near-infrared spectrum. Each photodiode is packaged in an isolated TO-5 or TO-8 can with an antireflection coated window to increase throughput. Specifications General Rise/ Fall Time @ V R =5V (ns): 24 (typical) Physical & Mechanical Properties Size of Active Area (mm): 3 Dia. Element Gap (mm): 0.045 Electrical Responsivity @ 1310nm (A/W): 0.85 minimum / 0.9 typical Responsivity @ 1550nm (A/W): 0.9 minimum / 0.95 typical Capacitance @ V R =5V (pF): 225 Noise Equivalent Power NEP (W/ Hz 1/2 ): 2.50 x 10 -14 @ 1550nm Maximum Reverse Voltage (V): 10 Dark Current @ V R =5V (nA): Maximum: 100 Typical: 2.0 Hardware & Interface Connectivity Connector: TO-8 Environmental & Durability Factors Operating Temperature (°C): -40 to +75 Storage Temperature (°C): -55 to +125 Regulatory Compliance Certificate of Conformance: View ×